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this is information on a product in full production. march 2014 docid018785 rev 3 1/15 15 STL80N75F6 n-channel 75 v, 4.5 m ? typ., 18 a stripfet? deepgate? vi power mosfet in powerflat? 5x6 package datasheet - production data figure 1. internal schematic diagram features ? low gate charge ? very low on-resistance ? high avalanche ruggedness applications ? switching applications description this device is an n-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. powerflat? 5x6 1 2 3 4 am15540v2 5 6 7 8 12 34 top view d(5, 6, 7, 8) g(4) s(1, 2, 3) order code v ds r ds(on) max i d STL80N75F6 75 v 5.5 m 18 a table 1. device summary order code marking package packaging STL80N75F6 80n75f6 powerflat? 5x6 tape and reel www.st.com
contents STL80N75F6 2/15 docid018785 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
docid018785 rev 3 3/15 STL80N75F6 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 75 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according to r thj-c drain current (continuous) at t c = 25 c 80 a i d (2) 2. the value is rated according to r thj-pcb drain current (continuous) at t pcb = 25 c 18 a i d (2) drain current (continuous) at t pcb =100 c 11 a i dm (2),(3) 3. pulse width limited by safe operating area drain current (pulsed) 72 a p tot (1) total dissipation at t c = 25 c 80 w p tot (2) total dissipation at t pcb = 25 c 4 w t stg storage temperature - 55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-pcb (1) 1. when mounted on fr-4 board of 1 inch2, 2 oz cu, t < 10 sec thermal resistance junction-pcb max 31.3 c/w r thj-case thermal resistance junction-case max. 1.56 c/w table 4. avalanche characteristics symbol parameter max value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 18 a e as single pulse avalanche energy (starting t j = 25 c, i d = i as , v dd = 50 v) 730 mj
electrical characteristics STL80N75F6 4/15 docid018785 rev 3 2 electrical characteristics (t j = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 75 v i dss zero gate voltage drain current (v gs = 0) v ds = 75 v, v ds = 75 v, t c = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2 4v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 9 a 4.5 5.5 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =25 v, f = 1 mhz, v gs = 0 - 6100 - pf c oss output capacitance - 530 - pf c rss reverse transfer capacitance -185- pf q g total gate charge v dd = 37.5 v, i d = 18 a v gs =10 v (see figure 14 ) -78-nc q gs gate-source charge - 24 - nc q gd gate-drain charge - 15 - nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level=20 mv open drain -1.47- table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 37.5 v, i d = 9 a, r g =4.7 , v gs =10 v (see figure 13 ) -28-ns t r rise time - 17 - ns t d(off) turn-off delay time - 66 - ns t f fall time - 12 - ns
docid018785 rev 3 5/15 STL80N75F6 electrical characteristics table 8. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current - 18 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 72 a v sd (2) 2. pulsed: pulse duration=300 s, duty cycle 1.5% forward on voltage i sd = 18 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 18 a, di/dt = 100 a/ s, v dd = 60 v, t j = 150 c (see figure 15 ) -48 ns q rr reverse recovery charge - 96 nc i rrm reverse recovery current - 4 a
electrical characteristics STL80N75F6 6/15 docid018785 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq pv v 7m ?& 7sfe ?& 6lqjoh sxovh pv $0y . wsv 6lqjohsxovh qdc $0y , ' 9 '6 9 $ 9 9 9 9 *6 9 $0y , ' 9 *6 9 $ 9 '6 9 $0y 9 *6 4 j q& 9 9 '' 9 , ' $ $0y 5 '6rq , ' $ 2kp 9 *6 9 $0y
docid018785 rev 3 7/15 STL80N75F6 electrical characteristics figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on-resistance vs temperature figure 11. source-drain diode forward characteristics figure 12. normalized v (br)dss vs temperature & 9 '6 9 s) &lvv &rvv &uvv $0y 9 *6wk 7 - ?& qrup , ' ?$ $0y 5 '6rq 7 - ?& qrup 9 *6 9 , ' $ $0y 9 6' , 6' $ 9 7 - ?& 7 - ?& 7 - ?& $0y 9 %5'66 7 - ?& qrup , ' p$ $0y
test circuits STL80N75F6 8/15 docid018785 rev 3 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid018785 rev 3 9/15 STL80N75F6 package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL80N75F6 10/15 docid018785 rev 3 figure 19. powerflat? 5x6 type s-c mechanical data b+b& 7rsylhz 6lghylhz %rwwrpylhz 3lq lghqwlilfdwlrq 3lq lghqwlilfdwlrq
docid018785 rev 3 11/15 STL80N75F6 package mechanical data figure 20. powerflat? 5x6 recommended footprint (dimensions in mm) table 9. powerflat? 5x6 type s-c mechanical data dim. mm min. typ. max. a0.80 1.00 a1 0.02 0.05 a2 0.25 b0.30 0.50 d5.20 e6.15 d2 4.11 4.31 e2 3.50 3.70 e1.27 e1 0.65 l 0.715 1.015 k1.05 1.35 footprint
packaging mechanical data STL80N75F6 12/15 docid018785 rev 3 5 packaging mechanical data figure 21. powerflat? 5x6 tape (a) figure 22. powerflat? 5x6 package orientation in carrier tape. a. all dimensions are in millimeters. measured from centerline of sprocket hole to centerline of pocket. cumulative tolerance of 10 sprocket holes is 0.20 . measured from centerline of sprocket hole to centerline of pocket. (i) (ii) (iii) 2 2.00.1 (i) bo (5.300.1) ko (1.200.1) 0.05) ?1.5 min. ?1.550.05 p ao(6.300.1) f(5.500.1)(iii) w(12.000.3) 1.750.1 4.00.1 (ii) p 0 y y section y-y c l p1(8.000.1) do d1 e 1 (0.30 t ref.r0.50 ref 0.20 base and bulk quantity 3000 pcs 8234350_tape_rev_c pin 1 identification
docid018785 rev 3 13/15 STL80N75F6 packaging mechanical data figure 23. powerflat? 5x6 reel 2.20 ?21.2 13.00 core detail 2.50 1.90 r0.60 77 128 ?a r1.10 2.50 4.00 r25.00 part no. w1 w2 18.4 (max) w3 06 ps esd logo at t e n t i o n observe precautions for handling electrostatic sensitive devices 11.9/15.4 12.4 (+2/-0) a 330 (+0/-4.0) all dimensions are in millimeters ?n 178(2.0) 8234350_reel_rev_c
revision history STL80N75F6 14/15 docid018785 rev 3 6 revision history table 10. document revision history date revision changes 27-apr-2011 1 first release. 10-nov-2011 2 section 4: package mechanical data has been updated. minor text changes. 11-mar-2014 3 ? modified: table 2 (i dm value), table 4 (i as , e as values) table 5 (r ds(on) typ. and max values), table 6 (typ. and test conditions), table 7 (test conditions and typ. values) table 8 (test conditions, typ. and max values) ? added: section 2.1: electrical characteristics (curves) . ? updated: section 4: package mechanical data ? minor text changes
docid018785 rev 3 15/15 STL80N75F6 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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